
Quantum Efficiency Tester
PL/EL Integrated System
PV-Reflectumeter
3D Confocal Microscope
In-Line Four Point Probe Tester
Four Point Probe Tester
In-Line Thin Film Thickness Tester
Raman Spectrometer
FTIR Spectrometer
Spectrophotometer
Automatic Spectroscopic Ellipsometer
Contact Resistance Tester
Ultra depth of field 3D microscope
Auto Visual Tester
VMM PV Vision Measuring Machine
Solar Cell Horizontal Tensile Tester
Steady State Solar Simulator for Solar Cell
Solar Cell UV Aging Test Chamber
Solar Cell Comprehensive Tensile Tester
Visual Inspection Tester
Wet Leakage Current Tester
PV Module EL Tester
PV Module UV Preconditioning Chamber
Steady State Solar Simulator for PV Module
Current Continuous Monitor
Potential Induced Degradation Test
Bypass Diode Tester
LeTID Test System
Reverse Current Overload Tester
Impulse Voltage Tester
Hipot Insulation Tester
Ground Continuity Tester
Hipot Insulation Ground Tester
Damp Heat Test Chamber
Humidity Freeze Test
Thermal Cycle Test Chamber
Dynamic Mechanical Load Tester
Static Mechanical Load Tester
Hail Impact Tester
Robustness of Termination Tester
Module Breakage Tester
Cut Susceptibility Tester
Peel Shear Strength Tester
Universal Testing Machine (Single-arm)
Universal Testing Machine (Double-arm)
Glass Transmittance Tester
Acetic Acid Test Chamber
EVA Degree of Crosslinking Test System
Junction Box Comprehensive Tester
Drop ball tester
Semi-automatic scanning four-probe tester
Stylus Profilometer
Maximum Power Point Tracker
Perovskite Glass Transmittance Tester
Perovskite P1 Laser Scribing Multifunctional Testing Machine
Perovskite Online PL Tester
Perovskite Online Sheet Resistance Tester
Online Perovskite Film Thickness Tester
Perovskite Process Inspection Workstation
Portable IV Curve Tester
Portable EL Tester
Portable Thermal Imaging Tester
Solar Module Multi-Channel Testing System
PV Inverter Power Quality Tester
Drone EL Tester
IV Tester
IVEL Cell Sorting Machine
Cleaning and Texturing
Step 1: Alkaline Polish.Removes surface damage to boost efficiency.
Step 2: Post-Laser 1 Clean.Exposes silicon for N-region; removes edge junctions to prevent leakage.
Step 3: Post-Laser 2 Process.Isolates P/N, clears coating overflow, and textures front for light trapping.
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Go to Product CenterP/N Back-Side Tunneling & i-poly
A back-side ultra-thin oxide tunneling pair modulates carrier transport via quantum tunneling, passivating the cell to reduce surface recombination losses and boost efficiency. Concurrently, intrinsic amorphous silicon (i-a-Si:H) is deposited for subsequent doping.
The hydrogen in i-a-Si:H passivates dangling bonds on the crystalline silicon (c-Si) back surface, lowering interface defect density and recombination. Additionally, i-a-Si:H serves as an intrinsic buffer layer, preventing direct contact between doped layers and c-Si to avoid defect recombination from heavy doping.
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Diffusion
Boron Diffusion: Dopes a-Si to form p⁺ poly-Si emitter, enhancing passivation and ohmic contact.
Phosphorus Diffusion: Heavily dopes a-Si into n⁺ poly-Si. Work function difference induces band bending, forming a carrier accumulation layer:
(1)Blocks holes while facilitating electron tunneling,
(2) Forms an n⁺/n high-low junction for field-effect passivation.
This dual mechanism optimizes both passivation and ohmic contact at back electrodes.
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Go to Product CenterLaser Patterning
Laser 1: Patterns initial films to define N and P regions.
Laser 2: Ablates N/P overlap for isolation, forming separate carrier channels.
Laser 3: Opens dielectric contacts for metal-silicon connection and carves isolation trenches.
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ALD and Front/Back Films
Al₂O₃ (ALD): Forms dense films with high negative fixed charge, passivating p-type silicon by neutralizing surface charges and suppressing recombination.
SiNₓ (PECVD): Matches refractive index between silicon and air to reduce reflection (300–1100 nm), boosting short-circuit current. Also releases hydrogen during annealing to passivate bulk/interface defects.
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Go to Product CenterMetallization
Metallization is critical in BC cells for efficient charge collection and low-resistance connections. The N-region typically uses screen-printed and sintered silver paste to form ohmic contacts, while the P-region employs aluminum paste with laser-opened passivation openings or a PVD seed layer plus copper plating.
As all electrodes are back-located, the metallization must balance low series resistance, high contact selectivity, minimal recombination, and precise pattern alignment.
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Go to Product CenterLaser-Assisted Sintering
A high-intensity laser irradiates the cell under a deflection voltage (≥10V), generating localized high current to induce sintering. This triggers Ag-Si interdiffusion, drastically reducing contact resistance.
Low-glass-frit paste minimizes passivation damage while improving ohmic contact. Already adopted by multiple BC cell manufacturers.
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Go to Product CenterRelated News
Driven by Both Quantum Efficiency and Spectral Response: Research on the Optical Properties and Powe
Efficiency Increased to 25.2% with Thin Layer Resistance Modulation Based Passivation and Anti-Refle
Fast Delivery and Comprehensive Support
Provide end-to-end support from product to production line operation through on-site operation guidance and after-sales technical support.

































































