Quantum Efficiency Tester
PL/EL Integrated System
PV-Reflectumeter
3D Confocal Microscope
In-Line Four Point Probe Tester
Four Point Probe Tester
In-Line Thin Film Thickness Tester
Raman Spectrometer
FTIR Spectrometer
Spectrophotometer
Automatic Spectroscopic Ellipsometer
Contact Resistance Tester
Ultra depth of field 3D microscope
Auto Visual Tester
VMM PV Vision Measuring Machine
Solar Cell Horizontal Tensile Tester
Steady State Solar Simulator for Solar Cell
Solar Cell UV Aging Test Chamber
Solar Cell Comprehensive Tensile Tester
Visual Inspection Tester
Wet Leakage Current Tester
PV Module EL Tester
PV Module UV Preconditioning Chamber
Steady State Solar Simulator for PV Module
Current Continuous Monitor
Potential Induced Degradation Test
Bypass Diode Tester
LeTID Test System
Reverse Current Overload Tester
Impulse Voltage Tester
Hipot Insulation Tester
Ground Continuity Tester
Hipot Insulation Ground Tester
Damp Heat Test Chamber
Humidity Freeze Test
Thermal Cycle Test Chamber
Dynamic Mechanical Load Tester
Static Mechanical Load Tester
Hail Impact Tester
Robustness of Termination Tester
Module Breakage Tester
Cut Susceptibility Tester
Peel Shear Strength Tester
Universal Testing Machine (Single-arm)
Universal Testing Machine (Double-arm)
Glass Transmittance Tester
Acetic Acid Test Chamber
EVA Degree of Crosslinking Test System
Junction Box Comprehensive Tester
Drop ball tester
Semi-automatic scanning four-probe tester
Stylus Profilometer
Maximum Power Point Tracker
Perovskite Glass Transmittance Tester
Perovskite P1 Laser Scribing Multifunctional Testing Machine
Perovskite Online PL Tester
Perovskite Online Sheet Resistance Tester
Online Perovskite Film Thickness Tester
Perovskite Process Inspection Workstation
Portable IV Curve Tester
Portable EL Tester
Portable Thermal Imaging Tester
Solar Module Multi-Channel Testing System
PV Inverter Power Quality Tester
Drone EL Tester
Solar Cell Surface Morphology
Purpose of Cleaning & Texturing
After silicon wafer slicing, edge damage and disrupted crystal lattice structures lead to severe surface recombination. The cleaning & texturing process aims to remove surface defects, create pyramidal light-trapping structures to enhance light absorption, and improve minority carrier lifetime.
Related Products
Go to Product CenterFront Boron Diffusion Process
In TOPCon cell manufacturing, front boron diffusion is a critical step to form the p+ emitter, directly impacting PN junction quality, carrier transport efficiency, and overall cell performance.
The PN junction is essential for photovoltaic conversion. Under controlled concentration, temperature, pressure, and duration, P-type dopants are diffused into the N-type substrate to achieve optimal junction depth, doping concentration (ρ), and sheet resistance (R) for solar cells.
Related Products
Go to Product CenterBSG Removal & Alkaline Polishing
In TOPCon fabrication, BSG (Borosilicate Glass) removal and alkaline polishing are vital surface treatments that influence passivation layer quality, surface recombination rates, and electrode contact performance.
During boron diffusion (e.g., for p+ emitter or back surface field formation), an amorphous BSG layer forms on the silicon surface. Residual BSG increases surface recombination, weakens adhesion of subsequent passivation layers (e.g., Al₂O₃/SiNₓ), and raises contact resistance.
Typically, BSG removal precedes alkaline polishing to eliminate surface damage. Some processes combine these steps (e.g., acid + alkaline polishing) to streamline production. Optimized combined processes can boost TOPCon cell Voc by 5-10 mV and efficiency by 0.1–0.3%.
Related Products
Go to Product CenterThe core innovation of TOPCon cells lies in forming an ultra-thin oxide layer and doped polysilicon layer to achieve effective carrier passivation, reducing surface recombination losses and improving efficiency.Deposition methods include LPCVD (Low-Pressure Chemical Vapor Deposition), PECVD (Plasma-Enhanced CVD), and PVD (Physical Vapor Deposition), with LPCVD being the industry mainstream. Key challenges include controlling polysilicon film thickness, uniformity, efficiency, and mitigating edge deposition (unintended coating on non-target areas).
Related Products
Go to Product CenterPSG Removal & RCA Cleaning
During phosphorus diffusion, P₂O₅ from POCl₃ decomposition forms PSG (Phosphosilicate Glass)—a mixture of phosphorus, SiO₂, and P₂O₅—on the wafer edges. PSG causes carrier leakage to the rear side, lowering shunt resistance and risking electrode shorting.
Therefore, the diffusion layers on the rear side and edges of the solar cell, along with the phosphosilicate glass (PSG) layer, must be removed through single-side etching using a liquid-carrying roller to eliminate the front and peripheral oxide layers (excluding poly-Si regions), BOE (Buffered Oxide Etch) with KOH for front and peripheral poly-Si removal, and strong acid etching to strip oxide layers on both front and rear sides.
ALD and Front/Back Films
In the fabrication of TOPCon cells, atomic layer deposition (ALD) of aluminum oxide (Al₂O₃) and front/back silicon nitride (SiNₓ) films aims to reduce rear surface recombination current, increase the cell's open-circuit voltage (V₀C), and thereby enhance overall cell efficiency. Additionally, silicon nitride serves as an excellent antireflective material, minimizing light reflection to improve optical absorption.
Related Products
Go to Product CenterScreen Printing
Screen printing applies metal paste (e.g., silver) to form electrodes, which are sintered at high temperatures to establish ohmic contact with the silicon substrate for current collection.
Optimizing gridline aspect ratio and spacing balances conductivity and optical performance. Reducing shading area risks higher contact resistance, necessitating careful trade-offs to maximize efficiency.
Related Products
Go to Product CenterLaser-Assisted Sintering (LAS)
By irradiating the cell with high-intensity laser to excite charge carriers while applying a deflection voltage of 10V or higher, local currents in the order of amperes are generated. Sintering occurs at corresponding locations, triggering interdiffusion between silver paste and silicon, which significantly reduces the contact resistance between metal and semiconductor. The pastes used in this process have reduced glass powder content, minimizing corrosion of the passivation layer while forming better ohmic contacts. This technology has been commercially adopted by most TOPCon cell manufacturers.
Related Products
Go to Product CenterFast Delivery and Comprehensive Support
Provide end-to-end support from product to production line operation through on-site operation guidance and after-sales technical support.