Quantum Efficiency Tester
PL/EL Integrated System
PV-Reflectumeter
3D Confocal Microscope
In-Line Four Point Probe Tester
Four Point Probe Tester
In-Line Thin Film Thickness Tester
Raman Spectrometer
FTIR Spectrometer
Spectrophotometer
Automatic Spectroscopic Ellipsometer
Contact Resistance Tester
Ultra depth of field 3D microscope
Auto Visual Tester
VMM PV Vision Measuring Machine
Solar Cell Horizontal Tensile Tester
Steady State Solar Simulator for Solar Cell
Solar Cell UV Aging Test Chamber
Solar Cell Comprehensive Tensile Tester
Visual Inspection Tester
Wet Leakage Current Tester
PV Module EL Tester
PV Module UV Preconditioning Chamber
Steady State Solar Simulator for PV Module
Current Continuous Monitor
Potential Induced Degradation Test
Bypass Diode Tester
LeTID Test System
Reverse Current Overload Tester
Impulse Voltage Tester
Hipot Insulation Tester
Ground Continuity Tester
Hipot Insulation Ground Tester
Damp Heat Test Chamber
Humidity Freeze Test
Thermal Cycle Test Chamber
Dynamic Mechanical Load Tester
Static Mechanical Load Tester
Hail Impact Tester
Robustness of Termination Tester
Module Breakage Tester
Cut Susceptibility Tester
Peel Shear Strength Tester
Universal Testing Machine (Single-arm)
Universal Testing Machine (Double-arm)
Glass Transmittance Tester
Acetic Acid Test Chamber
EVA Degree of Crosslinking Test System
Junction Box Comprehensive Tester
Drop ball tester
Semi-automatic scanning four-probe tester
Stylus Profilometer
Maximum Power Point Tracker
Perovskite Glass Transmittance Tester
Perovskite P1 Laser Scribing Multifunctional Testing Machine
Perovskite Online PL Tester
Perovskite Online Sheet Resistance Tester
Online Perovskite Film Thickness Tester
Perovskite Process Inspection Workstation
Portable IV Curve Tester
Portable EL Tester
Portable Thermal Imaging Tester
Solar Module Multi-Channel Testing System
PV Inverter Power Quality Tester
Drone EL Tester
"Silicon Wafer Incoming Inspection
Accurate evaluation and quality sorting of the electrical characteristic parameters of silicon wafers ensure high-efficiency battery production in subsequent stages, reduce material waste, lower costs, and improve overall yield.
The minority carrier lifetime reflects the recombination degree of photogenerated carriers at the surface and bulk of the solar cell, indicating their utilization efficiency. Photogenerated carriers are separated by the built-in electric field into the n-region and p-region, contributing to the photocurrent and photovoltage of the solar cell. To enhance conversion efficiency, it is critical to monitor the impact of each key process step on minority carrier lifetime. This allows timely adjustments to optimize production processes and improve cell performance.
During wafer sorting, high-resolution imaging systems are used to detect impurity and defect distributions in the wafers. Systematic analysis of factors reducing minority carrier lifetime enables effective quality control in slicing processes.
Single-Crystal Wafer PL Imaging
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Go to Product CenterHJT Solar Cell Surface Morphology Measurement
" Cleaning and Texturing
Similar to conventional solar cell manufacturing, the wet chemical treatment of silicon substrates in heterojunction solar cell production serves three primary purposes:
①Removal of surface contaminants and damaged layers;
②Formation of a textured surface (e.g., pyramidal texture) to reduce light reflection (light trapping) and minimize interface recombination losses;
③Removal of surface oxides and surface passivation to eliminate interface states induced by wet chemical treatment.
A key concern during texturing is the size of the pyramidal texture, which not only affects light reflectivity but also influences the deposition quality of subsequent amorphous silicon (a-Si) thin-film layers.
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Go to Product Center"PECVD Deposition and Doping of a-Si:H on Front and Back Surfaces
In the fabrication of heterojunction solar cells, doped thin-film layers are required to form the emitter and back surface field (BSF). Intrinsic amorphous silicon (i-a-Si:H) provides excellent passivation for crystalline silicon surfaces, but device performance is sensitive to the thickness of the intrinsic layer and the doping gas concentration during deposition.
On the front surface, an intrinsic a-Si:H layer is first deposited for passivation, followed by an n-type doped a-Si:H layer to form the surface field, enhancing charge carrier separation. Conversely, the back surface is coated with an intrinsic a-Si:H layer and a p-type doped a-Si:H layer, collectively forming the P-N junction.
Due to the sensitivity of PECVD deposition to power and pressure, rigorous thin-film characterization is essential to confirm the formation of amorphous silicon. Raman spectroscopy is a critical technique for this purpose.
For the intrinsic amorphous silicon layer, a high content of Si-H bonds, low content of Si-H₂ bonds, and a dense film structure are required to achieve good passivation performance, thus enabling high-efficiency a-Si:H/crystalline silicon heterojunction cells. Additionally, the higher hydrogen content in amorphous silicon compared to microcrystalline silicon and nanocrystalline silicon is one of the reasons for its superior passivation effect. Therefore, precise control of the a-Si:H layer deposition process to achieve high-quality surface passivation is crucial for manufacturing high-efficiency and stable heterojunction solar cells.
Excessively high doping concentrations may disrupt the amorphous silicon network structure and increase the interface state density, while insufficient doping may lead to increased series resistance (Rs) and decreased fill factor (FF) due to inadequate conductivity. Hence, precise control of the doping concentration is necessary.
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Go to Product Center"Deposition of TCO Films (Front & Back Sides)
Due to the limited conductivity of amorphous silicon, a transparent conductive oxide (TCO) layer is introduced between the electrodes and the a-Si layer to enhance carrier collection efficiency in heterojunction cells. This layer combines optical transparency with electrical conductivity, which is critical for improving carrier extraction.
In current HJT (heterojunction) cells, TCO films are primarily deposited using physical vapor deposition (PVD). By optimizing the doping ratio, deposition techniques, and process parameters of TCO films, properties such as transmittance, bandgap, sheet resistance, carrier concentration, and mobility can be enhanced. These improvements directly boost the short-circuit current, fill factor, and ultimate conversion efficiency of heterojunction solar cells.
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Go to Product CenterScreen-printed Electrodes
To extract the generated current, positive and negative electrodes must be formed on the solar cell surface. These electrodes, made of conductive materials, establish ohmic contact with both ends of the P-N junction. The most widely adopted method in the industry is screen printing, where silver paste is applied to the front and back sides of the cell.
Key requirements for electrode fabrication::
Exhibits effective interfacial contact with ITO thin films, low contact resistance, high electrical conductivity, minimal shading area, and superior current collection efficiency."
Strategies to enhance cell performance:
①Narrower gridline electrodes: Reduce shading losses to improve light utilization.;
②High-quality, low-resistance gridline materials: Optimize conductivity to boost fill factor (FF);
③Gridlines with high aspect ratios: Increase cross-sectional conductivity while minimizing shading, improving FF.
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Go to Product CenterFinished Solar Cell Testing
The inspection of finished solar cells is a critical step to ensure their performance and reliability.
Through electrical performance testing (evaluating conversion efficiency), quantum efficiency testing (measuring light conversion across different wavelengths), grid line tensile resistance, cell bending strength, and defect detection, this process verifies whether the cells meet specifications before being encapsulated into photovoltaic modules. Non-compliant cells are screened out to guarantee long-term stability, efficient power generation, and enhanced quality of the final product during the operational lifespan of the modules.
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Go to Product CenterFast Delivery and Comprehensive Support
Provide end-to-end support from product to production line operation through on-site operation guidance and after-sales technical support.